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![Photo of Prof. Dr. Wolfgang STOLZ]( "Photo of Prof. Dr. Wolfgang STOLZ")
Principal InvestigatorPhilipps-Universität MarburgMaterial Science Center (WZMW), Structure & Technology Research LaboratoryPhone: +49-6421 28-25696workEmail: wolfgang.stolz@physik.uni-marburg.deINTERNETLink: Project A1 (Stolz)Link: Project B7 (Stolz/SW Koch)Link: BiographyExpertise
Experimental physics, epitaxial growth of III/V compound semiconductor hetero- and nanostructures and their structural, electrical and optoelectronic properties, semiconductor technology, optoelectronic device applications
University Education
| 1994 | Habilitation (Dr. rer. nat. habil.) in Experimental Physics, “Materials science aspects and physical properties of novel III/V-semiconductor heterostructures”, U Marburg |
| 1986 | Doctoral degree in Physics (Dr. rer. nat.), U Stuttgart, Dissertation MPI Solid State Research Stuttgart, “Molecular beam epitaxy and optical properties of (GaIn)As/(AlIn)As-quantum well heterostructures”, thesis advisor: Prof. K. H. Ploog |
| 1982 | Diploma degree in Physics (Dipl. Phys.), U Heidelberg, MPI Nuclear Physics Heidelberg, “Diffusion of interstitial impurities in amorphous silicon”, supervisor: Dr. S. Kalbitzer |
| 1978-1982 | Studies in Physics, TU Karlsruhe and U Heidelberg |
Professional Experience
| since 2017 | Full professor (W3) in Experimental Physics, Semiconductor Physics and Epitaxy, Univ. Marburg |
| since 2009 | Head (jointly with Prof. K. Volz) Structure and Technology Research Laboratory, Material Sciences Center, Univ. Marburg |
| 2007-2012 | Coordinator BMBF-Joint Research Program “Monolithic integration of Ga(NAsP)-based laser structures on Si-substrate (MonoLaSi)” |
| since 2007 | Adjunct professor, Optical Sciences Center, Univ. Arizona, Tucson USA |
| 2004 | Co-founder and CTO of NAsP III/V GmbH, Marburg |
| 2002-2009 | Speaker DFG-Topical Research Group “Metastable compound semiconductors and heterostructures” |
| since 1999 | Independent technology consultant |
| 1993 | Co-founder of sgs Mochem GmbH, Marburg |
| 1989-1909 | Research group leader, Material Sciences Center and Department of Physics,
Univ, Marburg |
| 1988-1989 | Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog) |
| 1987-1988 | Guest Scientist, NTT Basic Research Laboratories, Tokyo, Japan, Semiconductor heterostructures (Dr. Y. Horikoshi) |
| 1983-1987 | Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)Honours, |
Honours, Awards and other Proofs of Qualification
| 2003 | Prize of the German Society of Crystal Growth (DGKK) |
| 1995 | Karl-Heinz-Beckurts-Prize (Technology transfer prize of the Federal Ministry of Research and Technology) |
| 1992 | Distinguished Scientific Achievement Award (Nippon Telegraph and Telephone Corp., NTT Basic Research Laboratory, Tokyo, Japan) |
| 1976 | Mangelsdorff-Prize |
Selected Publications
- G. Bernatz, S. Nau, R. Rettig, H. Jänsch, W. Stolz
Experimental investigations of structures of interior interfaces in GaAs
J. Appl. Phys. 86, 6752 (1999). - F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
Reduced threshold current densities of (GaIn)(NAs) single quantum well lasers for the emission in the range of 1,28-1,38 µm
Electron. Lett. 35, 571 (1999). - P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reilly
(GaIn)(NAs)-fine structure of the band gap due to the nearest neighbour configurations of the isovalent nitrogen
Phys. Rev. B 64, 121203 (2001). - B. Kunert, K. Volz, J. Koch, W. Stolz
Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate
Appl. Phys. Lett. 88, 182108 (2006). - K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz
GaP-nucleation on exact (001) Si substrates for III/V-device integration
J. Cryst. Growth 315, 37 (2011). - C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J.V. Moloney, S.W. Koch, W. Stolz
Type-II-VECSEL with Watt level output powers at 1.2 µm
Appl. Phys. Lett. 108, 071102 (2016).
Patents
- H. Lobentanzer, W. Stolz, K. Ploog, J. Nagle, Light emitting compositional semiconductor device (US-Patent No. 5,057,881 (1991)).
- W. Stolz, S. Lutgen, Verfahren zur Herstellung von Halbleiterschichtfolgen für optisch gepumpte Halbleitervorrichtung (EP 1 700 363 B1 (2004)).
- B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
- K. Reuter, J. Sundermeyer, A. Merkoulov, W. Stolz, K. Volz, M. Pokoj, T. Ochs, Tantal- und Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition (US 7,442407 B2 (2005)).
