Metal Organic Vapour Phase Epitaxy of Semiconductor Heterostructures and Interfaces


This project aims at the deposition of defined interfaces in III/V-compound semiconductor heter-ostructures by applying the developed low-temperature metal organic vapour phase epitaxy (MOVPE). As model systems for the different interface formation processes the lattice-matched, polar/nonpolar GaP/(001) Si- and GaAs/(001) Ge-interface, the strained (GaIn)As/(GaIn)P-heterostructures as well as interface configurations in metastable, multinary (GaIn)(NAsSb)-based heterostructures with type-II-band alignment are selected. In close cooperation with the partner projects the correlation of the MOVPE growth conditions with the structural as well as optoelectronic characteristics of these interface-dominated semiconductor heterostructures will be clarified and quantified on an atomic level as well as optimized for specific properties and applications. In this project the MOVPE growth studies will be complemented by in-situ reflection anisotropy spectroscopy (RAS), highly-selective chemical etching schemes to uncover internal interface structures and investigation of the interface morphology by subsequent atomic force microscopy (AFM) as well as high-resolution X-ray diffraction (HR-XRD) analysis and modelling.

Project-related publications

  1. K. Ishioka, A. Beyer, W. Stolz, K. Volz, H. Petek, U. Höfer, C. Stanton
    Coherent optical and acoustic phonons generated at lattice-matched GaP/Si (001) heterointerfaces
    J. Phys.: Cond. Matter 31, 094003 (2019) – Special Issue on Internal Interfaces.
  2. P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J.O. Oelerich, W. Stolz, K. Volz
    Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As-quantum well heterostructures explored by atomic resolution STEM
    J. Cryst. Growth 524, 125180 (2019).
  3. L. Rost, S. Gies, M. Stein, C. Fuchs, S. Nau, P. Kükelhan, K. Volz, W. Stolz, M. Koch, W. Heimbrodt
    Correlation of optical properties and interface morphology in type-II- semiconductor heterostructures
    J. Phys.: Cond. Matter 31, 014001 (2019) – Special Issue on Internal Interfaces.
  4. M. Stein, C. Lammers, M.J. Drexler, C. Fuchs, W. Stolz, M. Koch
    Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures
    Phys. Rev. Lett. 121, 017401 (2018).
  5. L. Rost, J. Lehr, M. Maradiya, L. Hellweg, F. Fillsack, W. Stolz, W. Heimbrodt
    The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures
    J. Luminescence 231, 117817 (2021).


Prof. Dr. Wolfgang STOLZ

Principal InvestigatorPhilipps-Universität MarburgMaterial Science Center (WZMW), Structure & Technology Research LaboratoryPhone: +49-6421 28-25696Project A1 (Stolz)Project B7 (Stolz/SW Koch)Biography

Former Contributors
Dr. Henning Döscher
Dr. Christian Fuchs
Dr. Philip Hens
Dr. Thilo Hepp
Dr. Kakhaber Jandieri
Dr. Oliver Maßmeyer
Dr. Lukas Nattermann
Stefan Reinhard