Time-Resolved Nonlinear Optical Spectroscopy of Semiconductor Interfaces


Time-resolved nonlinear optical spectroscopies are employed to obtain interface-specific information about electronic structure, vibrational excitations and  ultrafast dynamics of charge-transfer processes at semiconductor interfaces. Ongoing studies of GaP/Si(001) as a model for an interface between a polar and a nonpolar inorganic semiconductor will be continued and extended to GaAs/Ge(001). Build-up and decay of transient electric fields following optical excitation at buried interfaces is investigated with optical second-harmonic generation (SHG). Coherent phonon and plasmon dynamics of the systems are studied together with the groups of Petek (University of Pittsburgh/USA) and Ishioka (NIMS, Tsukuba/Japan) as associated partners of this CRC. A new SHG microscopy setup allows to time-resolve charge-transfer processes at interfaces between two-dimensional semiconductors, particularly as a function of their stacking angle. Finally, the dynamics of charge injection from organic thin films into silicon will be studied for well-defined interfaces based on functionalized cyclooctynes.

Project-related publications

  1. K. Ishioka, A. Rustagi, A. Beyer, W. Stolz, K. Volz, U. Höfer, H. Petek, C. Stanton
    Sub-picosecond acoustic pulses at buried GaP/Si interfaces
    Appl. Phys. Lett. 111, 062105 (2017).
  2. K. Brixius, A. Beyer, G. Mette, J. Güdde, M. Dürr, W. Stolz, K. Volz, U. Höfer
    Second-harmonic generation as a probe for structural and electronic properties of buried GaP/Si(001) interfaces
    J. Phys.: Condens. Matter 30, 484001 (2018) – Special Issue on Internal Interfaces.
  3. J.E. Zimmermann, B. Li, J.C. Hone, U. Höfer, G. Mette
    Second-harmonic imaging microscopy for time-resolved investigations of transition metal dichalcogenides
    J. Phys.: Condens. Matter 32, 485901 (2020).
  4. G. Mette, J.E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, U. Höfer
    Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
    Appl. Phys. Lett. 117, 081602 (2020).
  5. J.E. Zimmermann, Y.D. Kim, J.C. Hone, U. Höfer, G. Mette
    Directional ultrafast charge transfer in a WSe2/MoSe2 heterostructure selectively probed by time-resolved SHG imaging microscopy
    Nanoscale Horiz. 5, 1603 (2020).

No results.

Former Contributors
Marleen Axt
Tim Bergmeier
Dr. Kristina Brixius
Dr. Tamam Bohamud
Dr. Alexander Lerch
Dr. Marcus Lipponer
Dr. Marcel Reutzel
Dr. Jonas Zimmermann