ACS Appl. Mater. Interfaces 15 (2023) 39513 DOI:10.1021/acsami.3c06319

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Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN

M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann

ACS Appl. Mater. Interfaces 15 (2023) 39513 DOI:10.1021/acsami.3c06319

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Nat. Commun. 14 (2023) 3430 DOI:10.1038/s41467-023-38556-9

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Exciton transport in atomically thin semiconductors

E. Malic, R. Perea-Causin, R. Rosati, D. Erkensten, S. Brem

Nat. Commun. 14 (2023) 3430 DOI:10.1038/s41467-023-38556-9

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Small Methods (2023) 2300453 DOI:10.1002/smtd.202300453

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Measuring spatially-resolved potential drops at semiconductor hetero-interfaces using 4D-STEM

V. Chejarla, S. Ahmed, J. Belz, J. Scheunert, A. Beyer, K. Volz

Small Methods (2023) 2300453 DOI:10.1002/smtd.202300453

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