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![Photo of Prof. Dr. Michael DÜRR]( "Photo of Prof. Dr. Michael DÜRR")
Principal InvestigatorJustus-Liebig-Universität GießenInstitute of Applied PhysicsHeinrich-Buff-Ring 16 35392 GießenworkPhone: +49-641 99-33490workEmail: michael.duerr@ap.physik.uni-giessen.deINTERNETLink: Project A8 (Koert/Dürr)Link: BiographyExpertise
Experimental physics; reaction dynamics on semiconductor surfaces, scanning tunneling microscopy; cluster-surface dynamics and application in mass spectrometry
University Education
| 2000 | Doctoral degree in Physics, TU München, Dissertation on “Reaction dynamics of hydrogen on silicon surfaces investigated by means of optical second harmonic generation, molecular beam techniques, and scanning tunneling microscopy”, thesis advisor: Prof. U. Höfer |
| 1997 | Diploma degree in Physics, TU München, supervisor: Prof. U. Höfer |
| 1992-1997 | Studies in Physics, Universität Stuttgart and Technische Universität (TU) München |
Professional Experience
| since 2013 | Professor (W2) for Cluster Surface Dynamics and Scanning Tunneling Microscopy, Institute of Applied Physics, Justus Liebig University Giessen |
| 2006-2013 | Professor (W2) for Surface and Nano Chemistry, Hochschule Esslingen |
| 2006 | Visiting Scientist at Sony Materials Laboratories, Atsugi, Japan (3 months) |
| 2002-2006 | Scientist/Senior Scientist at Materials Science Laboratories, Sony Dtl., Stuttgart |
| 2000-2002 | Postdoc, Philipps-Universität Marburg (Prof. U. Höfer) |
| 1999 | Visiting Scientist, Physics Department, Columbia University New York, NY, USA (9 months, Prof. T. F. Heinz) |
| 1997-1998 | Research Assistant, MPI for Quantum Optics, Garching (Prof. K.-L. Kompa, Prof. U. Höfer) |
Honours, Awards and other Proofs of Qualification
| 2012 | Visiting professor at Peking University, State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, Beijing, China) |
| 2006 | Sony Deutschland Patent Award, Sony Deutschland) |
| 2006 | Sony Materials Laboratories Science Award, Sony Japan) |
| 1999 | DAAD grant for studying abroad) |
Selected Publications
- M. Dürr, A. Biedermann, Z. Hu, U. Höfer, T. F. Heinz
Probing high-barrier pathways of surface reactions by scanning tunneling microscopy
Science 296, 1838 (2002). - M. Dürr, A. Schmid, M. Obermaier, S. Rosselli, A. Yasuda, G. Nelles
Low-temperature fabrication of dye-sensitized solar cells by transfer of composite porous layers
Nature Mater. 4, 607 (2005). - M. Dürr, U. Höfer
Dissociative adsorption of molecular hydrogen on silicon surfaces
Surf. Sci. Rep. 61, 465 (2006). - R. Gebhardt, A. Tomsic, H. Schröder, M. Dürr, K.L. Kompa
Matrix-free formation of gas-phase biomolecular ions by soft cluster-induced desorption
Angew. Chem. Int. Ed. 48, 4162 (2009). - B. Hipp, I. Kunert, M. Dürr
Systematic control of hydrophobic and superhydrophobic properties using double-rough structures based on mixtures of metal-oxide nanoparticles
Langmuir 26, 6557 (2010). - M. Dürr, U. Höfer
Hydrogen diffusion on silicon surfaces
Progr. Surf. Sci. 88, 61 (2013). - M. Baur, C. R. Gebhardt, M. Dürr
Desorption/ionization induced by neutral cluster impact as a soft and efficient ionization source for ion trap mass spectrometry of biomolecules
Rapid Commun. Mass Spectrom. 28, 290 (2014). - B.-J. Lee, C.R. Gebhardt, H. Schröder, K.L. Kompa, M. Dürr
Observation of ionic desorption channels in cluster-induced desorption of alkali halides – Influence of surface electronic properties and surface configuration
Chem. Phys. Lett. 556, 77 (2013). - M. Reutzel, M. Lipponer, M. Dürr, U. Höfer
Binding energy and dissociation Barrier – experimental determination of the key parameters of the potential energy curve of diethyl ether on Si(001)
J. Phys. Chem. Lett. 6, 3971 (2015). - A. Portz, M. Baur, C. R. Gebhardt, M. Dürr
Mass spectrometry of oligopeptides in the presence of large amountsof alkali halides using desorption/ionization induced by neutral cluster impact
Biointerphases 11, 02A316 (2016).
Patents
- M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Method of producing a porous semiconductor film on a substrate (US 7935263 B2 (2011)).
- M. Dürr, G. Nelles, A. Yasuda, Y. Suzuki, K. Noda, M. Morooka, Photovoltaic cell (US 8193443 B2 (2012)).
- M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Porous semiconductor film on a substrate (US 8319098 B2 (2012)).
- M. Dürr, G. Nelles, A. Yasuda, Photovoltaic device containing carbon nanotubes and at least one organic hole conductor (US 8258500 B2 (2012)).
- M. Dürr, C.R. Gebhardt, Ion generation in mass spectrometers by cluster bombardment (DE 102012008259 B4 (2013)).
- M. Dürr, S. Rosselli, G. Nelles, A. Yasuda, Method of optimizing the band edge positions of the conduction band and the valence band of a semiconductor material for use in photoactive devices (US 8889467 B2 (2014)).
