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DÜRR, Michael Prof. Dr.

Photo of Prof. Dr. Michael DÜRR
Principal InvestigatorJustus-Liebig-Universität GießenInstitute of Applied PhysicsHeinrich-Buff-Ring 16 35392 GießenPhone: +49-641 99-33490Link: Project A8 (Koert/Dürr)Link: Biography


Experimental physics; reaction dynamics on semiconductor surfaces, scanning tunneling microscopy; cluster-surface dynamics and application in mass spectrometry

University Education

2000Doctoral degree in Physics, TU München, Dissertation on “Reaction dynamics of hydrogen on silicon surfaces investigated by means of optical second harmonic generation, molecular beam techniques, and scanning tunneling microscopy”, thesis advisor: Prof. U. Höfer
1997Diploma degree in Physics, TU München, supervisor: Prof. U. Höfer
1992-1997Studies in Physics, Universität Stuttgart and Technische Universität (TU) München

Professional Experience

since 2013Professor (W2) for Cluster Surface Dynamics and Scanning Tunneling Microscopy, Institute of Applied Physics, Justus Liebig University Giessen
2006-2013Professor (W2) for Surface and Nano Chemistry, Hochschule Esslingen
2006Visiting Scientist at Sony Materials Laboratories, Atsugi, Japan (3 months)
2002-2006Scientist/Senior Scientist at Materials Science Laboratories, Sony Dtl., Stuttgart
2000-2002Postdoc, Philipps-Universität Marburg (Prof. U. Höfer)
1999Visiting Scientist, Physics Department, Columbia University New York, NY, USA (9 months, Prof. T. F. Heinz)
1997-1998Research Assistant, MPI for Quantum Optics, Garching (Prof. K.-L. Kompa, Prof. U. Höfer)

Honours, Awards and other Proofs of Qualification

2012Visiting professor at Peking University, State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, Beijing, China)
2006Sony Deutschland Patent Award, Sony Deutschland)
2006Sony Materials Laboratories Science Award, Sony Japan)
1999DAAD grant for studying abroad)

Selected Publications

  1. M. Dürr, A. Biedermann, Z. Hu, U. Höfer, T. F. Heinz
    Probing high-barrier pathways of surface reactions by scanning tunneling microscopy
    Science 296, 1838 (2002).
  2. M. Dürr, A. Schmid, M. Obermaier, S. Rosselli, A. Yasuda, G. Nelles
    Low-temperature fabrication of dye-sensitized solar cells by transfer of composite porous layers
    Nature Mater. 4, 607 (2005).
  3. M. Dürr, U. Höfer
    Dissociative adsorption of molecular hydrogen on silicon surfaces
    Surf. Sci. Rep. 61, 465 (2006).
  4. R. Gebhardt, A. Tomsic, H. Schröder, M. Dürr, K.L. Kompa
    Matrix-free formation of gas-phase biomolecular ions by soft cluster-induced desorption
    Angew. Chem. Int. Ed. 48, 4162 (2009).
  5. B. Hipp, I. Kunert, M. Dürr
    Systematic control of hydrophobic and superhydrophobic properties using double-rough structures based on mixtures of metal-oxide nanoparticles
    Langmuir 26, 6557 (2010).
  6. M. Dürr, U. Höfer
    Hydrogen diffusion on silicon surfaces
    Progr. Surf. Sci. 88, 61 (2013).
  7. M. Baur, C. R. Gebhardt, M. Dürr
    Desorption/ionization induced by neutral cluster impact as a soft and efficient ionization source for ion trap mass spectrometry of biomolecules
    Rapid Commun. Mass Spectrom. 28, 290 (2014).
  8. B.-J. Lee, C.R. Gebhardt, H. Schröder, K.L. Kompa, M. Dürr
    Observation of ionic desorption channels in cluster-induced desorption of alkali halides – Influence of surface electronic properties and surface configuration
    Chem. Phys. Lett. 556, 77 (2013).
  9. M. Reutzel, M. Lipponer, M. Dürr, U. Höfer
    Binding energy and dissociation Barrier – experimental determination of the key parameters of the potential energy curve of diethyl ether on Si(001)
    J. Phys. Chem. Lett. 6, 3971 (2015).
  10. A. Portz, M. Baur, C. R. Gebhardt, M. Dürr
    Mass spectrometry of oligopeptides in the presence of large amountsof alkali halides using desorption/ionization induced by neutral cluster impact
    Biointerphases 11, 02A316 (2016).


  1. M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Method of producing a porous semiconductor film on a substrate (US 7935263 B2 (2011)).
  2. M. Dürr, G. Nelles, A. Yasuda, Y. Suzuki, K. Noda, M. Morooka, Photovoltaic cell (US 8193443 B2 (2012)).
  3. M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Porous semiconductor film on a substrate (US 8319098 B2 (2012)).
  4. M. Dürr, G. Nelles, A. Yasuda, Photovoltaic device containing carbon nanotubes and at least one organic hole conductor (US 8258500 B2 (2012)).
  5. M. Dürr, C.R. Gebhardt, Ion generation in mass spectrometers by cluster bombardment (DE 102012008259 B4 (2013)).
  6. M. Dürr, S. Rosselli, G. Nelles, A. Yasuda, Method of optimizing the band edge positions of the conduction band and the valence band of a semiconductor material for use in photoactive devices (US 8889467 B2 (2014)).