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STOLZ, Wolfgang Prof. Dr.

Photo of Prof. Dr. Wolfgang STOLZ
Principal InvestigatorPhilipps-Universität MarburgMaterial Science Center (WZMW), Structure & Technology Research LaboratoryPhone: +49-6421 28-25696Link: Project A1 (Stolz)Link: Project B7 (Stolz/SW Koch)Link: Biography


Experimental physics, epitaxial growth of III/V compound semiconductor hetero- and nanostructures and their structural, electrical and optoelectronic properties, semiconductor technology, optoelectronic device applications

University Education

1994Habilitation (Dr. rer. nat. habil.) in Experimental Physics, “Materials science aspects and physical properties of novel III/V-semiconductor heterostructures”, U Marburg
1986Doctoral degree in Physics (Dr. rer. nat.), U Stuttgart, Dissertation MPI Solid State Research Stuttgart, “Molecular beam epitaxy and optical properties of (GaIn)As/(AlIn)As-quantum well heterostructures”, thesis advisor: Prof. K. H. Ploog
1982Diploma degree in Physics (Dipl. Phys.), U Heidelberg, MPI Nuclear Physics Heidelberg, “Diffusion of interstitial impurities in amorphous silicon”, supervisor: Dr. S. Kalbitzer
1978-1982Studies in Physics, TU Karlsruhe and U Heidelberg

Professional Experience

since 2017Full professor (W3) in Experimental Physics, Semiconductor Physics and Epitaxy, Univ. Marburg
since 2009Head (jointly with Prof. K. Volz) Structure and Technology Research Laboratory, Material Sciences Center, Univ. Marburg
2007-2012Coordinator BMBF-Joint Research Program “Monolithic integration of Ga(NAsP)-based laser structures on Si-substrate (MonoLaSi)”
since 2007Adjunct professor, Optical Sciences Center, Univ. Arizona, Tucson USA
2004Co-founder and CTO of NAsP III/V GmbH, Marburg
2002-2009Speaker DFG-Topical Research Group “Metastable compound semiconductors and heterostructures”
since 1999Independent technology consultant
1993Co-founder of sgs Mochem GmbH, Marburg
1989-1909Research group leader, Material Sciences Center and Department of Physics,
Univ, Marburg
1988-1989Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)
1987-1988Guest Scientist, NTT Basic Research Laboratories, Tokyo, Japan, Semiconductor heterostructures (Dr. Y. Horikoshi)
1983-1987Research Assistant, MPI Solid State Research Stuttgart (Prof. K. H. Ploog)Honours,

Honours, Awards and other Proofs of Qualification

2003Prize of the German Society of Crystal Growth (DGKK)
1995Karl-Heinz-Beckurts-Prize (Technology transfer prize of the Federal Ministry of Research and Technology)
1992Distinguished Scientific Achievement Award (Nippon Telegraph and Telephone Corp., NTT Basic Research Laboratory, Tokyo, Japan)

Selected Publications

  1. G. Bernatz, S. Nau, R. Rettig, H. Jänsch, W. Stolz
    Experimental investigations of structures of interior interfaces in GaAs
    J. Appl. Phys. 86, 6752 (1999).
  2. F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski
    Reduced threshold current densities of (GaIn)(NAs) single quantum well lasers for the emission in the range of 1,28-1,38 µm
    Electron. Lett. 35, 571 (1999).
  3. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reilly
    (GaIn)(NAs)-fine structure of the band gap due to the nearest neighbour configurations of the isovalent nitrogen
    Phys. Rev. B 64, 121203 (2001).
  4. B. Kunert, K. Volz, J. Koch, W. Stolz
    Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate
    Appl. Phys. Lett. 88, 182108 (2006).
  5. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, W. Stolz
    GaP-nucleation on exact (001) Si substrates for III/V-device integration
    J. Cryst. Growth 315, 37 (2011).
  6. C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J.V. Moloney, S.W. Koch, W. Stolz
    Type-II-VECSEL with Watt level output powers at 1.2 µm
    Appl. Phys. Lett. 108, 071102 (2016).


  1. H. Lobentanzer, W. Stolz, K. Ploog, J. Nagle, Light emitting compositional semiconductor device (US-Patent No. 5,057,881 (1991)).
  2. W. Stolz, S. Lutgen, Verfahren zur Herstellung von Halbleiterschichtfolgen für optisch gepumpte Halbleitervorrichtung (EP 1 700 363 B1 (2004)).
  3. B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
  4. K. Reuter, J. Sundermeyer, A. Merkoulov, W. Stolz, K. Volz, M. Pokoj, T. Ochs, Tantal- und Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition (US 7,442407 B2 (2005)).