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VOLZ, Kerstin Prof. Dr.

Photo of Prof. Dr. Kerstin VOLZ
Principal InvestigatorPhilipps-Universität MarburgMaterial Science Center (WZMW), Structure & Technology Research LaboratoryPhone: +49-6421 28-22297Link: Project A5 (Volz)Link: Project A14 (Volz)Link: Project B13 (Chatterjee/Volz)Link: Biography


Experimental physics, structural characterization, transmission electron microscopy, epitaxial growth of semiconductor structures, correlation of structural optical and growth characteristics of functional materials

University Education

2006Habilitation (Dr. rer. nat. habil.) in Experimental Physics, Univ. Marburg, “Novel III/V semiconductor structures: from heteroepitaxial growth to quantitative nanoscale analysis”
1999Doctoral degree in Physics (Dr. rer. nat.), Univ. Augsburg / GSI Darmstadt / Philipps-Universität Marburg, Dissertation on “Composition and structure of SiC films formed by ion implantation techniques”, thesis advisor: Prof. W. Ensinger
1996Diploma degree in Physics (Dipl. Phys.), Univ. Augsburg, supervisor: Prof. B. Stritzker
1990-1996Studies in Physics, Universität Augsburg

Professional Experience

2018-2019Dean of the Department of Physics, Univ. Marburg
since 2018Member of the Managing Board of the German Society for Electron Microscopy (DGE)
since 2015Managing director of the WZMW
since 2013Vice Speaker of the Collaborative Research Center (Sonderforschungsbereich) “Structure and Dynamics of Internal Interfaces” (SFB 1083)
since 2012Speaker of the Research Training Group (Graduiertenkolleg) “Funktionalisierung von Halbleitern” (GRK 1782)
since 2010Heisenberg-Professor (W3) for Experimental Physics, Philipps-Universität Marburg
since 2009co-head (together with Dr. W. Stolz) of Structure and Technology Research Laboratory (STRL) of the WZMW, Philipps-Universität
2009-2010Heisenberg-Professor (W2) for Experimental Physics, Philipps-Universität Marburg
2008-2009Guest professor Institute of Physics, Humboldt Universität zu Berlin
2003-2008DFG-Junior Research group leader, WZMW, Philipps-Universität Marburg
2002Guest scientist Stanford University (USA) (Prof. J. S. Harris): Feodor Lynen scholarship
1997-2000Several research stays at Osaka National Research Laboratory, Japan

Honours, Awards and other Proofs of Qualification

since 2016Member of the MRS medal selection committee
2016Call for a chair (W3) “Advanced Materials” Eberhard Karls Universität Tübingen in personal union with head of the Nanoanalytics Center, NMI, Reutlingen, declined
2010Call for a chair (W3) “Angew. Physik – Halbleitermaterialien” TU Freiberg, declined
2010Member at “Internetportal für exzellente Wissenschaftlerinnen” by Robert-Bosch Foundation and Spektrum-Verlag (upon recommendation by DFG)
2009Patricia Pahamy teaching award, faculty of physics, Philipps-Universität Marburg
2008Heisenberg professorship of DFG
2001Feodor Lynen scholarship of Alexander von Humboldt Stiftung
1996Graduate Student Award of EMRS

Selected Publications

  1. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, E. P. O´Reillly
    (GaIn)(NAs)-fine structure of the band gap due to nearest neighbour configurations of the isovalent nitrogen
    Phys. Rev. B 64, 121203 (2001).
  2. B. Kunert, K. Volz, J. Koch, W. Stolz
    Direct band gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate
    Appl. Phys. Lett. 88, 182108 (2006).
  3. O. Rubel, I. Nemeth, W. Stolz, K. Volz,
    Modelling the compositional dependence of electron diffraction in GaAs- and GaP-based compound semiconductors
    Phys. Rev. B 78, 075207 (2008).
  4. I. Németh, B. Kunert, W. Stolz, K. Volz
    Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
    J. Cryst. Growth 310 (7-9), 1595 (2008).
  5. K. Volz, D. Lackner, I. Németh, B. Kunert, W. Stolz, C. Baur, F. Dimroth, A. W. Bett
    Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications
    J. Cryst. Growth 310 (7-9), 2222 (2008).
  6. K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Németh, B. Kunert, W. Stolz
    GaP-nucleation on exact (001) Si substrates for III/V-device integration
    J. Cryst. Growth 315, 37 (2011).
  7. P. Ludewig, N. Knaub, N. Hossein, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, K. Volz
    Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
    Appl. Phys. Lett. 102 (24), 242115 (2013).
  8. A. Beyer, A. Stegmüller, J. O. Oelerich, K. Jandieri, K. Werner, G. Mette, W. Stolz, Baranovskii, R. Tonner, K. Volz
    Pyramidal structure formation at the interface between III/V semiconductors and silicon
    Chem. Mater. 28 (10), 3265-75 (2016).
  9. A. Beyer, J. Belz, N. Knaub, K. Jandieri, K. Volz
    Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging
    J. Ultramic. 169, 1-10 (2016).


  1. K. Reuter, J. Sundermeyer, A. Merkulov, W. Stolz, K. Volz, M. Pokoj, Th. Ochs, Tantalund Niob-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition, (DE102005033102A1 & US2007/0042213A1 (2007)).
  2. K. Reuter, J. Sundermeyer, A. Merkulov, W. Stolz, K. Volz, M. Pokoj, Th. Ochs, Wolfram und Molybdän-Verbindungen und ihre Verwendung in der Chemical Vapour Deposition, (DE102006000823A1 & US 2007/0160761 A1 (2007)).
  3. B. Kunert, J. Koch, S. Reinhard, K. Volz, W. Stolz, III/V-Halbleiter (102005004582.0 (2005)).
  4. C. v. Hänisch, B. Ringler, E. Sterzer, A. Beyer, W. Stolz, K. Volz, Verwendung wenigstens einer binären Gruppe 15-Elementverbindung, eine 13/15-Halbleiterschicht und binäre Gruppe 15-Elementverbindungen (DE 10 2014 014 036.9 (2015)).